Program algorithm including soft erase for SONOS memory device
US6744675B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 2002 |
| Grant date | Jun 1, 2004 |
| Priority date | — |
| Expiry date | Dec 10, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3404
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a non-volatile SONOS-type memory device having a charge storing layer disposed between top and bottom dielectric layers, a method of programming the memory device includes selectively storing charge in an upper portion of the charge storing layer. The method includes performing a channel hot electron injection procedure followed by a soft erase operation in which charge within a bottom portion of the first charging cell is removed. A verification procedure is performed to determine whether at least one charge storing cell is in a programmed state. The method provides a programmed cell in which the stored charge is disposed adjacent an upper portion of the cell near the top dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.