Method for fabricating a semiconductor device using amorphous carbon having improved etch resistance
US6750127B1 · kind B1 · utility
31Cited by
8References
9Claims
0Family size
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Key dates
| Filing date | Feb 14, 2003 |
| Grant date | Jun 15, 2004 |
| Priority date | — |
| Expiry date | Feb 14, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0337
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An amorphous carbon layer is implanted with one or more dopants that enhance the etch resistivity of the amorphous carbon to etchants such as chlorine and HBr that are typically used to etch polysilicon. Such a layer may be pattern to form a handmask for etching polysilicon that provides improved pattern transfer accuracy compared to conventional undoped amorphous carbon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.