Post metal barrier/adhesion film
US6753248B1 · kind B1 · utility
5Cited by
72References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 27, 2003 |
| Grant date | Jun 22, 2004 |
| Priority date | — |
| Expiry date | Jan 27, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76885
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for processing a substrate. The method generally includes forming a copper interconnect in a sacrificial layer deposited on the substrate by patterning the sacrifical layer to form an interconnect and filling the interconnect with copper. The method additionally includes removing at least a portion of the sacrificial layer upon copper interconnect formation, depositing a barrier layer on the copper interconnect, and depositing a dielectric layer on the barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.