Multiple magnetoresistive (MR) layer sensor element having longitudinal bias layers with non-parallel magnetizations
US6754048B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2001 |
| Grant date | Jun 22, 2004 |
| Priority date | — |
| Expiry date | Aug 2, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49043
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Within a method for forming a magnetoresistive (MR) sensor element there is first provided a substrate. There is then formed over the substrate a first magnetoresistive (MR) layer having formed contacting the first magnetoresistive (MR) layer a magnetically biased first magnetic bias layer biased in a first magnetic bias direction with a first magnetic bias field strength. There is also formed separated from the first magnetoresistive (MR) layer by a spacer layer a second magnetoresistive (MR) layer having formed contacting the second magnetoresistive (MR) layer a magnetically un-biased second magnetic bias layer. There is then biased through use of a first thermal annealing method employing a first thermal annealing temperature, a first thermal annealing exposure time and a first extrinsic magnetic bias field the magnetically un-biased second magnetic bias layer to form a magnetically biased second magnetic bias layer having a second magnetic bias field strength in a second magnetic bias direction non-parallel to the first magnetic bias direction while simultaneously partially demagnetizing the magnetically biased first magnetic bias layer to provide a partially demagnetized magne…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.