Inventor · Fremont, CA, US

Simon Liao

74Patents
17h-index
46Co-inventors
84Inventor score

Filing activity: May 29, 1987 → Jun 17, 2014

Most-cited inventions

PatentTitleAreaCited byStatus
US6773515B2 FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures Emerging Cross-Sectional Technologies 111 Expired
US7262941B2 FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures Emerging Cross-Sectional Technologies 104 Expired
US6292336A Giant magnetoresistive (GMR) sensor element with enhanced magnetoresistive (MR) coefficient Physics 96 Expired
US6466418B1 Bottom spin valves with continuous spacer exchange (or hard) bias Emerging Cross-Sectional Technologies 90 Expired
US6998150B2 Method of adjusting CoFe free layer magnetostriction Emerging Cross-Sectional Technologies 72 Expired
US6770382B1 GMR configuration with enhanced spin filtering Emerging Cross-Sectional Technologies 43 Expired
US4992901A Self aligned magnetic poles using sacrificial mask Emerging Cross-Sectional Technologies 39 Expired
US5379172A Laminated leg for thin film magnetic transducer Emerging Cross-Sectional Technologies 31 Expired
US7477491B2 GMR device having an improved free layer Emerging Cross-Sectional Technologies 30 Active
USD657594S1 Chair General 29 Expired
US8749926B1 Scissor magnetic read head with wrap-around magnetic shield Physics 27 Active
US7180712B1 Shield structure design to improve the stability of an MR head Electricity 26 Expired
US5748416A Magnetoresistive playback head Physics 22 Expired
US5372698A High magnetic moment thin film head core Emerging Cross-Sectional Technologies 20 Expired
US6882509B2 GMR configuration with enhanced spin filtering Emerging Cross-Sectional Technologies 20 Expired
US6857180B2 Method for fabricating a patterned synthetic longitudinal exchange biased GMR sensor Emerging Cross-Sectional Technologies 19 Expired
US6888703B2 Multilayered structures comprising magnetic nano-oxide layers for current perpindicular to plane GMR heads Physics 18 Expired
US7016168B2 Method of increasing CPP GMR in a spin valve structure Physics 16 Expired
US6754048B2 Multiple magnetoresistive (MR) layer sensor element having longitudinal bias layers with non-parallel magnetizations Emerging Cross-Sectional Technologies 15 Expired
US8836059B2 Shape enhanced pin read head magnetic transducer with stripe height defined first and method of making same Physics 13 Active
US6581272B1 Method for forming a bottom spin valve magnetoresistive sensor element Emerging Cross-Sectional Technologies 12 Expired
US8941954B2 Magnetic sensor with extended pinned layer and partial wrap around shield Electricity 12 Active
US6953601B2 Synthetic free layer for CPP GMR Physics 12 Expired
US4756816A Electrodeposition of high moment cobalt iron Emerging Cross-Sectional Technologies 11 Expired
US6396671B1 Ruthenium bias compensation layer for spin valve head and process of manufacturing Emerging Cross-Sectional Technologies 10 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.