Modified source/drain re-oxidation method and system
US6756268B2 · kind B2 · utility
4Cited by
16References
35Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 10, 2002 |
| Grant date | Jun 29, 2004 |
| Priority date | — |
| Expiry date | May 10, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0411
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and devices are disclosed utilizing a phosphorous-doped oxide layer that is added prior to re-oxidation. This allows greater control of the re-oxidation process and greater control of the performance characteristics of semiconductor devices such as flash memory. For flash memory, greater control is gained over programming rates, erase rates, data retention and self align source resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.