Multilayer structure with controlled internal stresses and making same

US6756285B1 · kind B1 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Hubert Moriceau · Saint-Égrève, FR
• Olivier Rayssac · Grenoble, FR
• Anne-Marie Cartier · Luxeuil-les-Bains, FR
• Bernard Aspar · Voiron, FR

Key dates

• Filing date: Jan 9, 2002
• Grant date: Jun 29, 2004
• Expiry date: Jan 9, 2022

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/31678
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A multilayer structure with controlled internal stresses comprising, in this order, a first main layer (110a), at least a first constraint adaptation layer (130) in contact with the first main layer, at least a second stress adaptation layer (120) put into contact by adhesion with said first stress adaptation layer, and a second main layer (110b) in contact with the second stress adaptation layer, the first and second stress adaptation layers having contact stresses with the first and second main layers.Application to the realization of electronic circuits and membrane devices.