Method for transferring a thin film comprising a step of generating inclusions
US6756286B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 22, 1999 |
| Grant date | Jun 29, 2004 |
| Priority date | — |
| Expiry date | Nov 22, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for transfer of at least one thin film of solid material delimited in an initial substrate. The process includes a step in which a layer of inclusions is formed in the initial substrate at a depth corresponding to the required thickness of the thin film. These inclusions are designed to form traps for gaseous compounds which subsequently are implanted. In a subsequent step gaseous compounds are implanted in a manner to convey the gaseous compounds into the layer of inclusions. The dose of implanted gaseous compounds is made sufficient to cause the formation of micro-cavities to form a fracture plane along which the thin film can be separated from the remainder of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.