Ion implantation with improved ion source life expectancy
US6756600B2 · kind B2 · utility
27Cited by
3References
22Claims
0Family size
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Key dates
| Filing date | Feb 19, 1999 |
| Grant date | Jun 29, 2004 |
| Priority date | — |
| Expiry date | Mar 2, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31701
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of increasing ion source lifetime in an ion implantation system uses the introduction of an inert gas, such as argon or xenon, into the halide-containing source gas. Inert gas constituents have a cleansing effect in the plasma ambient by enhancing sputtering.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.