Magnetically confined metal plasma sputter source with magnetic control of ion and neutral densities
US6758949B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2002 |
| Grant date | Jul 6, 2004 |
| Priority date | — |
| Expiry date | Sep 17, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3402
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A metal vapor deposition reactor includes a primary reactor chamber having a primary chamber enclosure comprising a ceiling and side wall. The reactor further includes a secondary reactor chamber having a secondary chamber enclosure and a metal source target within the secondary chamber formed of a metal species to be deposited on said semiconductor wafer. Process gas inlets furnish process gases into a region of the secondary chamber near a working surface of said metal source target. A D.C. power source connected across said metal source target and a conductive portion of said secondary chamber enclosure has sufficient power to support ionization of the process gas near the working surface of the metal source target whereby to form a plasma that sputters metal ions and neutrals from the working surface of the metal source target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.