Br2SbCH3 a solid source ion implant and CVD precursor
US6767830B2 · kind B2 · utility
6Cited by
0References
13Claims
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Assignee
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Key dates
| Filing date | Aug 7, 2002 |
| Grant date | Jul 27, 2004 |
| Priority date | — |
| Expiry date | Aug 7, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A volatile solid-source novel antimony precursor, Br2SbCH3, that may be utilized in semiconductor processing chambers for depositing antimony on a substrate by deposition methods, e.g., chemical vapor deposition, ion implantation, molecular beam epitaxy, diffusion and rapid thermal processing. The novel antimony compound of the invention is synthesized by combining tribromide antimony with trimethylantimony under heating conditions that form a Br2SbCH3 crystalline product.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.