Semiconductor device tester which measures information related to a structure of a sample in a depth direction
US6768324B1 · kind B1 · utility
97Cited by
3References
35Claims
0Family size
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Key dates
| Filing date | Nov 1, 2000 |
| Grant date | Jul 27, 2004 |
| Priority date | — |
| Expiry date | Nov 1, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/24564
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Current produced in a sample 5 by irradiating the sample with parallel electron beam 2 is measured by an ammeter 9. The measurement is repeated while changing acceleration voltage of electron beam 2. An information related to a structure of the sample 5 in a depth direction thereof is obtained by a data processor 10, on the basis or a difference in transmittivity of electron beam 2 into the sample 5 due to the difference of acceleration voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.