Patent · US Expired

Negative resist process with simultaneous development and silylation

US6770423B2 · kind B2 · utility

3Cited by

3References

8Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Jörg Rottstegge · Erlangen, DE
Eberhard Kuhn · Hemhofen, DE
Waltraud Herbst · Uttenreuth, DE
Christian Eschbaumer · Arnstorf, DE
Christoph Hohle · Bubenreuth, DE
Gertrud Falk · Erlangen, DE
Michael Sebald · Waischenfeld, DE

Key dates

Filing date	Jul 1, 2002
Grant date	Aug 3, 2004
Priority date	—
Expiry date	Nov 20, 2022

Classification

Technology area (CPC G)Physics
CPC primaryG03F7/40
WIPO fieldOptics
WIPO sectorInstruments

Abstract

The invention relates to a process for producing amplified negative resist structures in which, following exposure and contrasting of the resist in a developing step, the resist structure is simultaneously developed and silylated. This substantially simplifies the production of amplified resist structures.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.