Method for producing a semiconductor device
US6770547B1 · kind B1 · utility
22Cited by
9References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2000 |
| Grant date | Aug 3, 2004 |
| Priority date | — |
| Expiry date | Oct 30, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor apparatus in which flip chip bonding is enabled without any underfill, and which comprises a semiconductor device, an electrically insulating layer formed on the semiconductor device by mask-printing an electrically insulating material containing particles, and an external connection terminal formed on the electrically insulating layer and electrically connected with an electrode of the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.