Patent · US Expired

Method of forming a semiconductor device having T-shaped gate structure

US6770552B2 · kind B2 · utility

3Cited by

4References

30Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Karsten Wieczorek · Dresden, DE
Manfred Horstmann · Dresden, DE
Rolf Stephan · Dresden, DE

Key dates

Filing date	Mar 27, 2003
Grant date	Aug 3, 2004
Priority date	—
Expiry date	Mar 27, 2023

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/518
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The cross-sectional area of polysilicon lines is increased by selectively epitaxially growing an upper portion of the polysilicon line in the presence of a dielectric layer exposing the upper portion. Thus, a substantially T-shaped line is obtained, allowing a minimum bottom-CD while insuring a sufficient high conductivity.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.