Method of forming wiring by implantation of seed layer material
US6770559B1 · kind B1 · utility
4Cited by
2References
33Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 29, 2002 |
| Grant date | Aug 3, 2004 |
| Priority date | — |
| Expiry date | Oct 29, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76874
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A conductive element of an integrated circuit wiring network is formed by a plating process. A seed layer for the conductive material is grown on the sidewalls and bottom surface of a trench using a low energy ion implantation process. The implantation is performed at an angle to the substrate to achieve coverage of the trench sidewalls. The resulting seed layer avoids constricting or closing the opening of the trench and has an approximately uniform thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.