Method and system for Joule heating characterization
US6770847B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2002 |
| Grant date | Aug 3, 2004 |
| Priority date | — |
| Expiry date | Feb 1, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2879
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
According to one exemplary embodiment, a method for establishing a relationship between Joule heating in a conductor and a current density in the conductor is implemented by performing wafer level measurements. According to this exemplary embodiment, wafer level measurements are performed to arrive at a temperature coefficient of resistance in the conductor. The method also includes determining a thermal resistance of the conductor. The thermal resistance is then utilized to establish a relationship between Joule heating in the conductor and the current density in the conductor. The relationship so obtained is then utilized to determine design rules, mean time to fail, and other information to aid in the design of reliable semiconductor devices. According to another exemplary embodiment, a wafer level measurement system is utilized to establish a relationship between Joule heating in a conductor and a current density in the conductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.