Method of programming a dual cell memory device
US6775187B1 · kind B1 · utility
13Cited by
15References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2003 |
| Grant date | Aug 10, 2004 |
| Priority date | — |
| Expiry date | Apr 24, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0475
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of programming a dual cell memory device having a first charge storing cell and second charge storing cell. The first charge storing cell can be pre-read to determine if the first charge storing cell stores an amount of charge to increase a threshold voltage of the memory device over a specified threshold voltage. If not, the second charge storing cell can be programmed with a standard program pulse. If so, the second charge storing cell can be programed with a modified program pulse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.