Method and apparatus for etching ruthenium films
US6776919B2 · kind B2 · utility
3Cited by
2References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2001 |
| Grant date | Aug 17, 2004 |
| Priority date | — |
| Expiry date | Sep 19, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32134
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a method and apparatus for etching a ruthenium film which can sufficiently etch away a ruthenium film formed on or adhering to the peripheral region, especially a no-device-formed region, backside or other portions of a substrate. The method comprises etching a ruthenium film formed on a substrate with a chemical liquid having a pH of not less than 12 and an oxidation-reduction potential of not less than 300 mVvsSHE.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.