Compositions for cleaning organic and plasma etched residues for semiconductor devices
US6777380B2 · kind B2 · utility
26Cited by
29References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2001 |
| Grant date | Aug 17, 2004 |
| Priority date | — |
| Expiry date | Jul 10, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A composition for the stripping of photoresist and the cleaning of residues from substrates, and for silicon oxide etch, comprising from about 0.01 percent by weight to about 10 percent by weight of one or more fluoride compounds, from about 10 percent by weight to about 95% by weight of a sulfoxide or sulfone solvent, and from about 20 percent by weight to about 50 percent by weight water. The composition may contain corrosion inhibitors, chelating agents, co-solvents, basic amine compounds, surfactants, acids and bases.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.