III-Phospide and III-Arsenide flip chip light-emitting devices

US6784463B2 · kind B2 · utility

Assignee

• Lumileds Lighting US, LLC · US

Inventors

• Michael D. Camras · San Jose, US
• Daniel A. Steigerwald · Eindhoven, NL
• Frank M. Steranka · San Jose, US
• Michael J. Ludowise · San Jose, US
• Paul Scott Martin · Pleasanton, US
• Michael R. Krames · Los Altos, US
• Fred A. Kish, Jr. · Palo Alto, US
• Stephen A. Stockman · معلمی نژاد, US

Key dates

• Filing date: Mar 11, 2002
• Grant date: Aug 31, 2004
• Expiry date: Mar 11, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/816
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A light-emitting semiconductor device includes a stack of layers including an active region. The active region includes a semiconductor selected from the group consisting of III-Phosphides, III-Arsenides, and alloys thereof. A superstrate substantially transparent to light emitted by the active region is disposed on a first side of the stack. First and second electrical contacts electrically coupled to apply a voltage across the active region are disposed on a second side of the stack opposite to the first side. In some embodiments, a larger fraction of light emitted by the active region exits the stack through the first side than through the second side. Consequently, the light-emitting semiconductor device may be advantageously mounted as a flip chip to a submount, for example.