Method of controlled chemical vapor deposition of a metal oxide ceramic layer
US6787186B1 · kind B1 · utility
Assignees
Inventor
Key dates
| Filing date | Dec 14, 1998 |
| Grant date | Sep 7, 2004 |
| Priority date | — |
| Expiry date | Dec 14, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4481
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a metal oxide ceramic layer is provided, in which a gaseous flow of a vaporized solution of a precursor organo metal compound in a volatile organic solvent, e.g., plus an oxidizing gas, in the presence of a protonating additive substance and/or activating agent in gaseous state, is conducted into contact with a surface of a substrate. The operation is effected under vacuum pressure at a thermal decomposition temperature for converting the precursor compound to its corresponding metal oxide, e.g., having the same oxidation state as in the precursor compound. The additive substance is present in an amount sufficient for facilitating thermal decomposition of the precursor compound and for controlling the in situ oxidation state of the deposited metal and the amount of oxygen in the formed layer, e.g., while suppressing formation of volatile intermediates and of vacancies in the formed layer. The activating agent is present in an amount sufficient for producing in situ hydrogen-active compounds for enhancing conversion of the precursor compound to its said metal oxide as well as for controlling the in situ oxidation state of the deposited metal and the amount of oxy…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.