Mosfets incorporating nickel germanosilicided gate and methods for their formation
US6787864B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 31, 2002 |
| Grant date | Sep 7, 2004 |
| Priority date | — |
| Expiry date | Dec 31, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6219
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A MOSFET gate or a MOSFET source or drain region comprises silicon germanium or polycrystalline silicon germanium. Silicidation with nickel is performed to form a nickel germanosilicide that preferably comprises the monosilicide phase of nickel silicide. The inclusion of germanium in the silicide provides a wider temperature range within which the monosilicide phase may be formed, while essentially preserving the superior sheet resistance exhibited by nickel monosilicide. As a result, the nickel germanosilicide is capable of withstanding greater temperatures during subsequent processing than nickel monosilicide, yet provides approximately the same sheet resistance and other beneficial properties as nickel monosilicide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.