Field plated schottky diode and method of fabrication therefor

US6790753B2 · kind B2 · utility

Assignee

• Agere Systems Inc. · US

Inventors

• John Desko · Wescosville, US
• Michael John Evans · Yardley, US
• Chung-Ming Hsieh · Newton, US
• Tzu-Yen Hsieh · Wyomissing, US
• Bailey Jones · Shillington, US
• Thomas J. Krutsick · Kutztown, US
• John Michael Siket, Jr. · West Lawn, US
• Brian Thompson · Colchester, US
• Steven W. Wallace · Kutztown, US

Key dates

• Filing date: Oct 29, 2003
• Grant date: Sep 14, 2004
• Expiry date: Oct 29, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D8/60

Abstract

A Schottky diode is fabricated by a sequence of fabrication by a sequence of fabrication steps. An active region of a semiconductor substrate is defined in which a Schottky diode is fabricated. At least first and second layers of insulating material are applied over the active area. A first layer of insulating material, having a first etching rate, is applied over the active area. A second layer of insulating material having a second, greater, etch rate is applied over the first layer of insulating material to a thickness that is about twice the thickness of the first layer of insulating material. The insulating material is patterned and a window is etched through the layers of insulating material to the semiconductor substrate. Metal is applied and unwanted metal is etched away leaving metal in the window forming a Schottky contact therein. One or more barrier layers may be employed.