Non-volatile memory read circuit with end of life simulation
US6791880B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 6, 2003 |
| Grant date | Sep 14, 2004 |
| Priority date | — |
| Expiry date | May 6, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/5006
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory read circuit having adjustable current sources to provide end of life simulation. A flash memory device comprising a reference current source used to provide a reference current for comparison to the current of a memory cell being read, includes an adjustable current source in parallel with the memory cell being read, and an adjustable current source in parallel with the reference current source. The current from the memory cell, reference current source, and their parallel adjustable current sources are input to cascode circuits for conversion to voltages that are compared by a sense amplifier. The behavior of the cascode circuits and sense amplifier in response to changes in the memory cell and reference current source may be evaluated by adjusting the adjustable current sources so that the combined current at each input to the sense amplifier simulates the current of the circuit after aging or cycling.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.