Surface alteration of metal interconnect in integrated circuits for electromigration and adhesion improvement

US6794755B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Jose Maiz · Portland, US
• Xiaorong Morrow · Portland, US
• Thomas Marieb · Portland, US
• Carolyn Block · Portland, US
• Jihperng Leu · Portland, US
• Paul McGregor · Hillsboro, US
• Markus Kuhn · Hillsboro, US
• Mitchell Taylor · Lake Oswego, US

Key dates

• Filing date: Mar 25, 2003
• Grant date: Sep 21, 2004
• Expiry date: Apr 6, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Described is a method and apparatus for altering the top surface of a metal interconnect. In one embodiment of the invention, a metal interconnect and a barrier layer are formed into an interlayer dielectric (ILD) and the metal interconnect and the barrier layer are planarized to the top of the ILD. The top surfaces of the metal interconnect, the barrier layer, and the ILD are altered with a second metal to form an electromigration barrier. In one embodiment of the invention, the second metal is prevented from contaminating the electrical resistivity of the metal interconnect.