Gas driven planetary rotation apparatus and methods for forming silicon carbide layers
US6797069B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2002 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Dec 21, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6838
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A gas driven rotation apparatus for use with a flow of drive gas includes a base member having an upper surface, a main platter overlying the upper surface of the base member, and a satellite platter overlying the main platter. The apparatus is adapted to direct the flow of drive gas between the upper surface of the base member and the main platter such that the main platter is rotated relative to the base member by the flow of drive gas. At least a portion of the flow of drive gas is directed from between the upper surface of the base member and the main platter to between the main platter and the satellite platter such that the satellite platter is rotated relative to the main platter by the at least a portion of the flow of drive gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.