Method for depositing refractory metal layers employing sequential deposition techniques
US6797340B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 10, 2002 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Oct 10, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45525
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber and exposing the substrate surface to a boride. A nucleation layer is then deposited on the substrate surface in the same processing chamber by alternately pulsing a tungsten-containing compound and a reducing gas selected from a group consisting of silane (SiH4), disilane (Si2H6), dichlorosilane (SiCl2H2), derivatives thereof, and combinations thereof. A tungsten bulk fill may then be deposited on the nucleation layer using cyclical deposition, chemical vapor deposition, or physical vapor deposition techniques.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.