Method of forming a rim phase shifting mask and using the rim phase shifting mask to form a semiconductor device
US6797440B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2002 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Jan 4, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/29
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor device is formed by patterning a resist layer using a rim phase shifting mask. A multilayer or single patterning layer to form the different phase-shifting regions and opaque regions is used to manufacture the rim phase shifting mask. First phase shifting regions are formed by transferring an opening in the multilayer or single patterning layer through an opaque layer and a transparent substrate. At least portions of the same multilayer or single patterning layer are used to recess the opaque layer a predetermined distance to form rims (second phase shifting regions). The first phase-shifting regions phase shift the light traveling through them 180 degrees relative to the light traveling through the rims, thereby increasing the contrast of the light traveling through the rim phase shifting mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.