Process for depositing WSix layers on a high topography with a defined stoichiometry

US6797613B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Bernhard Sell · Dresden, DE
• Annette Sanger · Dresden, DE
• Georg Schulze-Icking · Ottobrunn, DE

Key dates

• Filing date: Jul 16, 2002
• Grant date: Sep 28, 2004
• Expiry date: Jul 16, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/28518
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Tungsten silicide layers are formed on a substrate and a semiconductor component has deep trench capacitors with a filling of tungsten silicide. The tungsten silicide layers are deposited on the substrate at a temperature of less than 400° C. and at a pressure of less than 10 torr from the vapor phase. The vapor phase hs a tungsten-containing precursor substance and a silicon-containing precursor substance. The molar ratio of the silicon-containing precursor compound to the tungsten-containing precursor compound in the vapor phase is selected to be greater than 500.