Annette Sanger
12Patents
3h-index
24Co-inventors
56Inventor score
Filing activity: Dec 11, 2000 → Dec 15, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9660037B1 | Semiconductor wafer and method | Electricity | 35 | Active |
| US6542054B2 | Acoustic mirror and method for producing the acoustic mirror | Emerging Cross-Sectional Technologies | 21 | Expired |
| US6774005B2 | Method for fabricating a metal carbide layer and method for fabricating a trench capacitor containing a metal carbide | Electricity | 3 | Expired |
| US7199414B2 | Stress-reduced layer system for use in storage capacitors | Electricity | 3 | Expired |
| US6987295B2 | Trench capacitor and method for fabricating the trench capacitor | Electricity | 3 | Expired |
| US6916704B2 | Multiple deposition of metal layers for the fabrication of an upper capacitor electrode of a trench capacitor | Electricity | 2 | Expired |
| US6998307B2 | Method for fabricating a storage capacitor | Electricity | 2 | Expired |
| US6686265B2 | Method of producing a capacitor electrode with a barrier structure | Electricity | 2 | Expired |
| US7273790B2 | Method for fabricating trench capacitor with insulation collar electrically connected to substrate through buried contact, in particular, for a semiconductor memory cell | Electricity | 1 | Expired |
| US7078309B2 | Methods for producing a structured metal layer | Electricity | 0 | Expired |
| US7129173B2 | Process for producing and removing a mask layer | Electricity | 0 | Expired |
| US6797613B2 | Process for depositing WSix layers on a high topography with a defined stoichiometry | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.