Method and apparatus for improved electroplating fill of an aperture
US6797620B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2002 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Aug 5, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76879
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus is provided for filling apertures formed in a substrate surface by depositing materials that selectively inhibit or limit the formation or growth of subsequent layers used to fill an aperture. In one aspect, a method is provided for processing a substrate including providing a substrate having a field and apertures formed therein, wherein the apertures each have a bottom and sidewalls, depositing a seed layer on the bottom and sidewalls of the apertures, depositing a growth-inhibiting layer on at least one of the field of the substrate or an upper portion of the sidewalls of the apertures, and depositing a conductive layer on the growth-inhibiting layer and the seed layer. Deposition of the growth-inhibiting layer improves fill of the aperture from the bottom of the aperture up to the field of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.