Structure and method for isolating porous low-k dielectric films
US6798043B2 · kind B2 · utility
9Cited by
8References
18Claims
0Family size
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Key dates
| Filing date | Jan 2, 2002 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | May 3, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A film structure includes low-k dielectric films and N—H base source films such as barrier layer films, etch-stop films and hardmask films. Interposed between the low-k dielectric film and adjacent N—H base film is a TEOS oxide film which suppresses the diffusion of amines or other N—H bases from the N—H base source film to the low-k dielectric film. The film structure may be patterned using DUV lithography and a chemically amplified photoresist since there are no base groups present in the low-k dielectric films to neutralize the acid catalysts in the chemically amplified photoresist.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.