Method for producing and/or renewing an etching mask

US6806037B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Matthias Goldbach · Dresden, DE
• Thomas Hecht · Dresden, DE
• Bernhard Sell · Dresden, DE

Key dates

• Filing date: Jun 12, 2002
• Grant date: Oct 19, 2004
• Expiry date: Nov 8, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/3085
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An etching mask is produced for etching a substrate by a photoresist layer being exposed such that areas which are exposed once are not yet completely exposed and, on the basis of a reflective layer which is located under the photoresist layer, additionally exposed areas are exposed completely. In consequence, a first etching mask which is used for etching a substrate can be renewed by a second etching mask in that a photoresist layer which is applied to the first etching mask or instead of the first etching mask is exposed such that areas which have been exposed once are not yet completely exposed, and areas which have been additionally exposed on the basis of a reflective layer which is located under the photoresist layer and corresponds to the first etching mask are exposed completely.