Trench buried bit line memory devices and methods thereof

US6806137B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Luan C. Tran · Meridian, US
• Mark Durcan · Boise, US
• Howard C. Kirsch · Eagle, US

Key dates

• Filing date: Nov 11, 2003
• Grant date: Oct 19, 2004
• Expiry date: Nov 11, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/485

Abstract

A memory device such as a 6F2 memory device includes isolation trenches that are formed generally parallel to and along associated strips of active area. A conductive bit line is recessed within each isolation trench such that the uppermost surface of the bit line is recessed below the uppermost surface of the base substrate. A bit line contact strap electrically couples the bit line to the active area both along a vertical dimension of the bit line strap and along a horizontal dimension across the uppermost surface of the base substrate.