Patent · US Expired

Method of manufacturing a field effect transistor

US6806153B2 · kind B2 · utility

2Cited by

6References

55Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Karsten Wieczorek · Dresden, DE
Manfred Horstmann · Dresden, DE
Thomas Feudel · Radebeul, DE

Key dates

Filing date	Jun 17, 2003
Grant date	Oct 19, 2004
Priority date	—
Expiry date	Jun 17, 2023

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/26513
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present invention allows the manufacturing of field effect transistors with reduced thermal budget. A first amorphized region and a second amorphized region are formed in a substrate adjacent to the gate electrode by implanting ions of a non-doping element, the presence of which does not significantly alter the conductive properties of the substrate. The formation of the amorphized regions may be performed before or after the formation of a source region, a drain region, an extended source region and an extended drain region. The substrate is annealed to achieve solid phase epitaxial regrowth of the amorphized regions and to activate dopants in the source region, the drain region, the extended source region and the extended drain region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.