Semiconductor component with an increased breakdown voltage in the edge area

US6806533B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Ralf Henninger · Birkenfeld, DE
• Franz Hirler · Isen, DE
• Joachim Krumrey · Eisenlohrsweg, AT
• Markus Zundel · Egmating, DE
• Walter Rieger · Arnoldstein, AT
• Martin Pölzl · Ossiach, AT

Key dates

• Filing date: Mar 28, 2003
• Grant date: Oct 19, 2004
• Expiry date: Apr 17, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/516

Abstract

A semiconductor component has a cell array formed in a semiconductor body with a number of identical transistor cells and at least one edge cell formed at an edge of the cell array. Each of the transistor cells has a control electrode, which is formed in a trench, and the edge cell has a field plate, which is formed in a trench, with a distance between the trench of the edge cell and the trench of the immediately adjacent transistor cell being less than the distance between a trench of a transistor cell and the trench of an immediately adjacent transistor cell in the cell array.