Ralf Henninger
12Patents
8h-index
18Co-inventors
61Inventor score
Filing activity: Jun 10, 2002 → Jan 25, 2008
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6833584B2 | Trench power semiconductor | Electricity | 75 | Expired |
| US6690062B2 | Transistor configuration with a shielding electrode outside an active cell array and a reduced gate-drain capacitance | Electricity | 72 | Expired |
| US7005351B2 | Method for fabricating a transistor configuration including trench transistor cells having a field electrode, trench transistor, and trench configuration | Electricity | 70 | Expired |
| US6806533B2 | Semiconductor component with an increased breakdown voltage in the edge area | Electricity | 68 | Expired |
| US7091573B2 | Power transistor | Electricity | 44 | Expired |
| US6891223B2 | Transistor configuration with a structure for making electrical contact with electrodes of a trench transistor cell | Electricity | 38 | Expired |
| US7777278B2 | Lateral semiconductor component with a drift zone having at least one field electrode | Electricity | 14 | Active |
| US7173306B2 | Vertical semiconductor component having a drift zone having a field electrode, and method for fabricating such a drift zone | Electricity | 14 | Expired |
| US7274077B2 | Trench transistor | Electricity | 6 | Expired |
| US6927101B2 | Field-effect-controllable semiconductor component and method for fabricating the component | Electricity | 5 | Expired |
| US7060562B2 | Method for fabricating gate electrodes in a field plate trench transistor, and field plate trench transistor | Electricity | 2 | Expired |
| US6903416B2 | Trench transistors and methods for fabricating trench transistors | Electricity | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.