Method to fill deep trench structures with void-free polysilicon or silicon
US6809005B2 · kind B2 · utility
38Cited by
5References
32Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Mar 12, 2003 |
| Grant date | Oct 26, 2004 |
| Priority date | — |
| Expiry date | Mar 12, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/047
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides methods of producing trench structures having substantially void-free filler material therein. The fillers may be grown from a liner material such as polysilicon formed along the sidewalls of the trench. Previously formed voids may be healed by exposing the voids and growing epitaxial silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.