Selective deposition of a barrier layer on a metal film
US6809026B2 · kind B2 · utility
89Cited by
86References
43Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2002 |
| Grant date | Oct 26, 2004 |
| Priority date | — |
| Expiry date | Dec 18, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76849
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method to selectively deposit a barrier layer on a metal film formed on a substrate is disclosed. The barrier layer is selectively deposited on the metal film using a cyclical deposition process including a predetermined number of deposition cycles followed by a purge step. Each deposition cycle comprises alternately adsorbing a refractory metal-containing precursor and a reducing gas on the metal film formed on the substrate in a process chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.