Method and device for attenuating harmonics in semiconductor plasma processing systems
US6812646B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2002 |
| Grant date | Nov 2, 2004 |
| Priority date | — |
| Expiry date | Mar 18, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32082
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A system and method for maintaining a plasma in a plasma region, by supplying RF power at a fundamental frequency to the plasma region together with a gas in order to create an RF electromagnetic field which interacts with the gas to create a plasma that contains electromagnetic energy components at frequencies that are harmonics of the fundamental frequency. The components at frequencies that are harmonics of the fundamental frequency are removed from the plasma by placing a body of an RF absorber material in energy receiving communication with the plasma, the body having a frequency dependent attenuation characteristic such that the body attenuates electrical energy at frequencies higher than the fundamental frequency more strongly than energy at the fundamental frequency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.