Cleaning residues from surfaces in a chamber by sputtering sacrificial substrates
US6814814B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2002 |
| Grant date | Nov 9, 2004 |
| Priority date | — |
| Expiry date | Dec 4, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a method of cleaning process residues formed on surfaces in a substrate processing chamber, a sacrificial substrate comprising a sacrificial material is placed in the chamber, a sputtering gas is introduced into the chamber, and the sputtering gas is energized to sputter the sacrificial material from the substrate. The sputtered sacrificial material reacts with residues on the chamber surfaces to clean them. In one version, the sacrificial substrate comprises a silicon-containing material that when sputtered deposits silicon on the chamber walls that reacts with and cleans fluorine-containing species that are left behind by a chamber cleaning process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.