Segmented power MOSFET of safe operation
US6815276B2 · kind B2 · utility
4Cited by
6References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2002 |
| Grant date | Nov 9, 2004 |
| Priority date | — |
| Expiry date | Oct 3, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Segmented power transistors and fabrication methods are disclosed in which transistor segments are spaced from one another to facilitate thermal diffusion, and in which other electrical devices can be formed in the spaces between transistor segments.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.