Multilayer interconnect structure containing air gaps and method for making

US6815329B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Katherina Babich · Chappaqua, US
• Roy A. Carruthers · Stormville, US
• Timothy J. Dalton · Ridgefield, US
• Alfred Grill · White Plains, US
• Jeffrey Hedrick · Peekskill, US
• Christopher V. Jahnes · Upper Saddle River, US
• Ebony L. Mays · Hillsboro, US
• Laurent Perraud · Acton, US
• Sampath Purushothaman · Yorktown Heights, US
• Katherine L. Saenger · Ossining, US

Key dates

• Filing date: Apr 2, 2002
• Grant date: Nov 9, 2004
• Expiry date: May 31, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A novel air-gap-containing interconnect wiring structure is described incorporating a solid low-k dielectric in the via levels, and a composite solid plus air-gap dielectric in the wiring levels. Also provided is a method for forming such an interconnect structure. The method is readily scalable to interconnect structures containing multiple wiring levels, and is compatible with Dual Damascene Back End of the Line (BEOL) processing.