Power semiconductor component, IGBT and field-effect transistor

US6815769B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Frank Pfirsch · Birkenfeld, DE
• Carsten Schäffer · Sattendorf, AT

Key dates

• Filing date: Jan 28, 2003
• Grant date: Nov 9, 2004
• Expiry date: Jan 28, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/252

Abstract

A trench power semiconductor component, in particular an IGBT, has an electrode (4) in a trench (3) that is laterally divided into a section (10) that serves as a gate and a section (11) that is connected to the source metallization (6). A method for making the trench power semiconductor component is also included.