Carsten Schäffer
7Patents
4h-index
17Co-inventors
50Inventor score
Filing activity: Jun 18, 2001 → Oct 31, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6541818B2 | Field-effect transistor configuration with a trench-shaped gate electrode and an additional highly doped layer in the body region | Electricity | 21 | Expired |
| US6815769B2 | Power semiconductor component, IGBT and field-effect transistor | Electricity | 20 | Expired |
| US7514750B2 | Semiconductor device and fabrication method suitable therefor | Electricity | 14 | Expired |
| US8367532B2 | Semiconductor device and fabrication method | Electricity | 5 | Active |
| US7253475B2 | Power transistor cell and power transistor component with fusible link | Electricity | 4 | Expired |
| US9355958B2 | Semiconductor device having a corrosion-resistant metallization and method for manufacturing thereof | Electricity | 4 | Active |
| US8431988B2 | Lateral trench transistor, as well as a method for its production | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.