Patent · US Expired

Magnetic memory configuration

US6816406B2 · kind B2 · utility

0Cited by

9References

8Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Heinz Honigschmid · Starnberg, DE
Helmut Kandolf · Hersbruck, DE
Stefan Lammers · Hersbruck, DE

Key dates

Filing date	Nov 17, 2003
Grant date	Nov 9, 2004
Priority date	—
Expiry date	Nov 17, 2023

Classification

Technology area (CPC G)Physics
CPC primaryG11C11/1675
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A magnetic memory configuration stores data and avoids ageing effects. The memory configuration contains a cell array containing magnetic memory cells disposed along a first direction and a second direction crossing the former, a multiplicity of electrical lines along the first direction, and a multiplicity of electrical lines along the second direction. The magnetic memory cells in each case are disposed at crossover points of the electrical lines. A first current supply device supplies respectively selected electrical lines along the first direction with current. A second current supply device supplies respectively selected electrical lines along the second direction with current. The second current supply device is configured for setting the direction of the current in accordance with an information item to be written. The first current supply device is suitable for changing over the direction of the current as desired.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.