Oblique deposition to induce magnetic anisotropy for MRAM cells
US6818961B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2003 |
| Grant date | Nov 16, 2004 |
| Priority date | — |
| Expiry date | Jun 30, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F41/18
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a magnetoresistive tunneling junction cell comprising the steps of providing a substrate with a surface, depositing a first magnetic region (17) having a resultant magnetic moment vector onto the substrate, depositing an electrically insulating material (16) onto the first magnetic region, and depositing a second magnetic region (15) onto the electrically insulating material, wherein at least a portion of one of the first and second magnetic regions is formed by depositing said region at a nonzero deposition angle relative to a direction perpendicular to the surface of the substrate to create an induced anisotropy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.