Process for deposition of semiconductor films
US6821825B2 · kind B2 · utility
240Cited by
36References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2002 |
| Grant date | Nov 23, 2004 |
| Priority date | — |
| Expiry date | Mar 21, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/933
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Chemical vapor deposition processes utilize chemical precursors that allow for the deposition of thin films to be conducted at or near the mass transport limited regime. The processes have high deposition rates yet produce more uniform films, both compositionally and in thickness, than films prepared using conventional chemical precursors. In preferred embodiments, a higher order silane is employed to deposit thin films containing silicon that are useful in the semiconductor industry in various applications such as transistor gate electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.