Method of forming a metal silicide gate in a standard MOS process sequence

US6821887B2 · kind B2 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Karsten Wieczorek · Dresden, DE
• Stephan Kruegel · Sankt Goar, DE
• Manfred Horstmann · Dresden, DE
• Thomas Feudel · Radebeul, DE

Key dates

• Filing date: Mar 18, 2003
• Grant date: Nov 23, 2004
• Expiry date: Mar 18, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/693
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The polysilicon gate electrode of a MOS transistor may be substantially completely converted into a metal silicide without sacrificing the drain and source junctions in that a thickness of the polysilicon layer, for forming the gate electrode, is targeted to be substantially converted into metal silicide in a subsequent silicidation process. The gate electrode, substantially comprised of metal silicide, offers high conductivity even at critical dimensions in the deep sub-micron range, while at the same time the effect of polysilicon gate depletion is significantly reduced. Manufacturing of the MOS transistor, having the substantially fully-converted metal silicide gate electrode, is essentially compatible with standard MOS process technology.